Datasheet4U Logo Datasheet4U.com

RU60E25K - N-Channel Advanced Power MOSFET

Description

G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pu

Features

  • 60V/25A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =40mΩ(Typ. )@VGS=4.5V.
  • ESD protected.
  • Reliable and Rugged.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU60E25K
Manufacturer Ruichips
File Size 598.18 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60E25K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU602B N-Channel 60V MOSFET VBsemi
RU6055 Sensors ifm
RU6199 N-Channel Advanced Power MOSFET Ruichips Semiconductor

Other Datasheets by Ruichips

Part Number Description
RU60E25L N-Channel Advanced Power MOSFET
RU60E25R N-Channel Advanced Power MOSFET
RU60E16L N-Channel Advanced Power MOSFET
RU60E16R N-Channel Advanced Power MOSFET
RU60E5D N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU60E25K N-Channel Advanced Power MOSFET Features • 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.
Published: |