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RU60E25R - N-Channel Advanced Power MOSFET

Description

TO-220 Applications Power Management Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuou

Features

  • 60V/25A, RDS (ON) =35mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU60E25R
Manufacturer Ruichips
File Size 299.52 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60E25R Datasheet

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Full PDF Text Transcription

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RU60E25R N-Channel Advanced Power MOSFET MOSFET Features • 60V/25A, RDS (ON) =35mΩ(Typ.
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