RU60E25R Description
TO-220 Applications Power Management Ratings N-Channel MOSFET Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous.
RU60E25R Key Features
- 60V/25A, RDS (ON) =35mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- ESD protected
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)