Datasheet4U Logo Datasheet4U.com

RU60E16R - N-Channel Advanced Power MOSFET

Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

  • 60V/16A, RDS (ON) =60mΩ(Typ. )@VGS=10V RDS (ON) =75mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU60E16R
Manufacturer Ruichips
File Size 297.00 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60E16R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU602B N-Channel 60V MOSFET VBsemi
RU6055 Sensors ifm
RU6199 N-Channel Advanced Power MOSFET Ruichips Semiconductor

Other Datasheets by Ruichips

Part Number Description
RU60E16L N-Channel Advanced Power MOSFET
RU60E25K N-Channel Advanced Power MOSFET
RU60E25L N-Channel Advanced Power MOSFET
RU60E25R N-Channel Advanced Power MOSFET
RU60E5D N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU60E16R N-Channel Advanced Power MOSFET MOSFET Features • 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.
Published: |