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RU75110Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU75110Q
Manufacturer Ruichips
File Size 271.87 KB
Description N-Channel Advanced Power MOSFET
Download RU75110Q Download (PDF)

General Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 110 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 440 A 110 A 82 192 W 96 0.78 °C/W 50 °C/W 400 mJ www.ruichips.com RU75110Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75110Q Min.

Typ.

Overview

RU75110Q N-Channel Advanced Power MOSFET.

Key Features

  • 75V/110A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).