RU75110S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU75110S n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU75110S
Manufacturer	Ruichips
File Size	291.58 KB
Description	N-Channel Advanced Power MOSFET
Download	RU75110S Download (PDF)

General Description

TO-263 Applications • DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– OCT., 2012 Rating 75 ±25 175 -55 to 175 ① 110 ② 440 ① 110 ① 82 188 94 0.8 Unit V °C °C A A A W W °C/W 400 mJ www.ruichips.com RU75110S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75110S Unit Min.

Typ.

Overview

RU75110S N-Channel Advanced Power MOSFET MOSFET.

Key Features

75V/110A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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