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RU7580R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU7580R
Manufacturer Ruichips
File Size 289.97 KB
Description N-Channel Advanced Power MOSFET
Download RU7580R Download (PDF)

General Description

TO-220 Applications • Motor Control N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 Rating 75 ±25 175 -55 to 175 80 ① 320 80 58 125 62.5 1.2 Unit V °C °C A A A W W °C/W 169 mJ www.ruichips.com RU7580R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU7580R Unit Min.

Typ.

Overview

RU7580R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 75V/80A, RDS (ON) =8mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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