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RU7H2K Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU7H2K N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU7H2K
Manufacturer Ruichips
File Size 247.14 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU7H2K-Ruichips.pdf

General Description

Applications • High efficiency switch mode power supplies TO251 Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– JAN., 2013 1 N-Channel MOSFET Rating Unit TC=25°C 700 ±30 150 -55 to 150 2 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 8A 2 A 1.3 56 W 22 2.2 °C/W 100 °C/W 5 mJ .ruichips.

RU7H2K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU7H2K Min.

Key Features

  • 700V/2A, RDS (ON) =5000mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Fast Switching.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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