RU80100R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU80100R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU80100R
Manufacturer	Ruichips
File Size	485.48 KB
Description	N-Channel Advanced Power MOSFET
Download	RU80100R Download (PDF)

General Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2010 Rating 80 ±25 175 -55 to 175 100 ① 400 ② 100 ② 90 188 94 0.8 Unit V °C °C A A A W °C/W 729 mJ www.ruichips.com RU80100R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80100R Unit Min.

Typ.

Overview

RU80100R N-Channel Advanced Power MOSFET MOSFET.

Key Features

80V/100A, RDS (ON) =5.5mΩ (Type) @ VGS=10V,IDS=40A.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

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