Datasheet4U Logo Datasheet4U.com

RU80100S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU80100S
Manufacturer Ruichips
File Size 308.27 KB
Description N-Channel Advanced Power MOSFET
Download RU80100S Download (PDF)

General Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 80 ±25 175 -55 to 175 100 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 400 A 100 A 71 188 W 94 0.8 °C/W 62.5 °C/W 225 mJ Ruichips Semiconductor Co., Ltd Rev.

A– DEC., 2013 1 www.ruichips.com RU80100S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80100S Min.

Typ.

Key Features

  • 80V/100A, RDS (ON) =5.5mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

More Datasheets from Ruichips

Part Number Description
RU80100R N-Channel Advanced Power MOSFET
RU80190R N-Channel Advanced Power MOSFET
RU8048R N-Channel Advanced Power MOSFET
RU8048S N-Channel Advanced Power MOSFET
RU8080R N-Channel Advanced Power MOSFET
RU8080S N-Channel Advanced Power MOSFET
RU8099R N-Channel Advanced Power MOSFET
RU80N15 N-Channel Advanced Power MOSFET
RU80N15Q N-Channel Advanced Power MOSFET
RU80N15R N-Channel Advanced Power MOSFET