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RU80N15 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU80N15
Manufacturer Ruichips
File Size 485.74 KB
Description N-Channel Advanced Power MOSFET
Download RU80N15 Download (PDF)

General Description

TO-220 TO-263 TO-220F TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev.

C – JAN., 2010 Rating 150 ±25 175 -55 to 175 80 300 ① 80 ② 60 400 220 0.45 62.5 1000 Unit V °C °C A A W °C/W mJ www.ruichips.com RU80N15 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80N15 Unit Min.

Typ.

Overview

RU80N15 N-Channel Advanced Power MOSFET.

Key Features

  • 150V/80A RDS (ON)=31mΩ(Typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available.