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RU80N15S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU80N15S
Manufacturer Ruichips
File Size 302.16 KB
Description N-Channel Advanced Power MOSFET
Download RU80N15S Download (PDF)

General Description

D Applications • Automotive applications and a wide variety of other applications • High Efficiency Synchronous in SMPS • High Speed Power Switching G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 80 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 300 A 80 A 60 176 W 88 0.85 °C/W 62.5 °C/W 169 mJ Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2013 1 www.ruichips.com RU80N15S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80N15S Min.

Typ.

Key Features

  • 150V/80A, RDS (ON) =31mΩ(Typ. )@VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available RU80N15S N-Channel Advanced Power MOSFET Pin.