Datasheet4U Logo Datasheet4U.com

RUH4060K - N-Channel Advanced Power MOSFET

Description

G DS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ

Features

  • 40V/55A, RDS (ON) =6.5mΩ(Typ. )@VGS=10V RDS (ON) =8mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RUH4060K
Manufacturer Ruichips
File Size 301.99 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH4060K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Ruichips

Part Number Description
RUH4060L N-Channel Advanced Power MOSFET
RUH40130R N-Channel Advanced Power MOSFET
RUH4020H N-Channel Advanced Power MOSFET
RUH4040M2 N-Channel Advanced Power MOSFET
RUH4080M N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RUH4060K N-Channel Advanced Power MOSFET Features • 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management. • Switch Applications.
Published: |