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RUS1H20R - Power Schottky Barrier Diode

Description

TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VRRM VR Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) per Device Average Rectified Forward Current, TC=130°C per Diode IFSM TSTG TJ Peak Forward Surge Current,8.3ms Half S

Features

  • VRRM= 100V IF(AV)=2x 10A.
  • Low Power Loss and High Efficiency.
  • High Surge Capability.
  • Low Leakage Current.
  • Low Forward Voltage Drop.
  • Lead Free and Green Devices Available.

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Datasheet Details

Part number RUS1H20R
Manufacturer Ruichips
File Size 221.47 KB
Description Power Schottky Barrier Diode
Datasheet download datasheet RUS1H20R Datasheet

Full PDF Text Transcription

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Features • VRRM= 100V IF(AV)=2x 10A • Low Power Loss and High Efficiency • High Surge Capability • Low Leakage Current • Low Forward Voltage Drop • Lead Free and Green Devices Available Applications • Rectifiers in SMPS • Free Wheeling Diode • DC-DC Converters RUS1H20R Power Schottky Barrier Diode Pin Description TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VRRM VR Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) per Device Average Rectified Forward Current, TC=130°C per Diode IFSM TSTG TJ Peak Forward Surge Current,8.
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