RUS1H21R Datasheet Power Schottky Barrier Diode

Manufacturer: Ruichips

RUS1H21R power schottky barrier diode by Ruichips - Datasheet Preview

Datasheet Details

Part number	RUS1H21R
Manufacturer	Ruichips
File Size	221.49 KB
Description	Power Schottky Barrier Diode
Download	RUS1H21R Download (PDF)

General Description

TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VRRM VR Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) per Device Average Rectified Forward Current, TC=130°C per Diode IFSM TSTG TJ Peak Forward Surge Current,8.3ms Half Sine Wave Storage Temperature Range Operating Junction Temperature Mounted on Large Heat Sink RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Schottky Barrier Diode Rating Unit 100 100 20 10 150 -55 to 150 150 V V A A A °C °C 1.8 °C/W 62.5 °C/W Ruichips Semiconductor Co., Ltd Rev.

B– JAN., 2013 1 www.ruichip

Key Features

VRRM= 100V IF(AV)=2x 10A.
Low Power Loss and High Efficiency.
High Surge Capability.
Low Leakage Current.
Low Forward Voltage Drop.
Lead Free and Green Devices Available.

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