HED57XXU12 Datasheet | Samsung Semiconductor

SPECIFICATION MODEL : HED57XXU12 .. Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W. PARK 2006.9.19 S.W. KIM 2006.9.19 H.C. JOUNG 2006.9.19 SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743 HED57XXU12(060919) Rev.0 Page 1/17 Revision history (Model : HED57XXU12) Date Rev. No Contents revised Establishment Design S.W.Park Approval H.C.Joung .. HED57XXU12(060919) Rev.0 Page 2/17 1. Description The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide...