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HED58XXU12 - Low Power Hall-Effect Switch

General Description

The HED58XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.

It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points.

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Other Datasheets by Samsung Semiconductor

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HED57XXU12 Low Power Hall-Effect Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPECIFICATION MODEL : HED58XXU12 Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W. PARK 2006.9.19 S.W. KIM 2006.9.19 H.C. JOUNG 2006.9.19 SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743 HED58XXU12(060919) Rev.0 Page 1/17 Revision history (Model : HED58XXU12) Date 2006.9.19 Rev. No 0 Contents revised Establishment Design S.W.Park Approval H.C.Joung HED58XXU12(060919) Rev.0 Page 2/17 1. Description The HED58XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points.