SW10N65 Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW10N65 Key Features
- High ruggedness
- Low RDS(ON) (Typ 1Ω)@VGS=10V
- Low Gate Charge (Typ 40nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: Charge,LED,PC Power