SW10N65K Description
Source This power MOSFET is produced with advanced super junction technology of SAMWIN. 10A RDS(ON) :0.36 Ω 2 1 3 This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW10N65K Key Features
- High ruggedness
- Low RDS(ON) (Typ 0.36Ω)@VGS=10V
- Low Gate Charge (Typ29nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:LED, Charger