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SW7N90 - N-channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 1.8 Ω)@VGS=10V.
  • Gate Charge (Typical 50nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested BVDSS : 900V ID : 7.0A RDS(ON) : 1.8ohm 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW7N90
Manufacturer SAMWIN
File Size 411.25 KB
Description N-channel MOSFET
Datasheet download datasheet SW7N90 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW7N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 900V ID : 7.0A RDS(ON) : 1.8ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.