SW7N90 Datasheet | SEMIWILL

SW7N90 PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. SCHEMATIC SYMBOL Features - High ruggedness - R DS(ON) (Max. 1.8 Ω)@V GS=10V - Gate Charge (Typ.26n C) - Improved dv/dt Capability - 100% Avalanche Tested TO-220F PACKAGE 900 7.0 4.4 28 ±30 780 21 4.0 32 0.8 3.87 62.5 05081.R11 2/11 REV.1205B2 Page 11 .protekdevices. .semiwill. Free Datasheet http://.. SW7N90 PP0640SA - PP3500SC V GS =0V,I D =250u A V DS =800V,V GS =0V V DS =640V,T C =125 C V DS =30V,V GS =0V V DS =-30V,V GS =0V 900 10 100 V DS =V GS ,I D =250u A V GS =10V,I D =1.5A 5.0 1.8 1440 V GS =0V,V DS =25V,f=1MHz 140 17 35 V DS =400V,I D =3.0A,R G =25ohm (note 4,5) 80 95 55 40 V DS =640V,V GS =10V,I D =3.0A (note 4,5) 8.5 20 1880 185 23 80 170 200 120 52 Integral reverse p-n Junction diode in the MOSFET I S =3.0A, V GS =0V I S =3.0A, V GS =0V d I F /d t =100A/us Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 67m H, I AS = 3.0A, V DD = 50V, R G =25Ω, Starting T J = 25 C 3. I SD≤ 3.0A, di/dt = 200A/us, V DD≤ BV DSS , Staring T J =25 C 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. 400 4.3 6.4 25.6 1.4 u C 05081.R11 2/11...