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SW7N90 - N-CHANNEL POWER MOSFET

General Description

This MOSFET is produced with advanced VDMOS technology of SEMIWILL.

This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics .

Key Features

  • High ruggedness.
  • R DS(ON) (Max. 1.8 Ω)@V GS=10V.
  • Gate Charge (Typ.26nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested GD S TO-220F.

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Datasheet Details

Part number SW7N90
Manufacturer SEMIWILL
File Size 1.27 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet SW7N90 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW7N90 PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. G D S SCHEMATIC SYMBOL FEATURES • High ruggedness • R DS(ON) (Max. 1.8 Ω)@V GS=10V • Gate Charge (Typ.26nC) • Improved dv/dt Capability • 100% Avalanche Tested GD S TO-220F PACKAGE 900 7.0 4.4 28 ±30 780 21 4.0 32 0.8 300 3.87 62.5 05081.R11 2/11 REV.1205B2 Page 11 www.protekdevices.com www.semiwill.com Free Datasheet http://www.