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HXB15H1G160CF Datasheet 1-gbit Double-date-rate-three Sdram

Manufacturer: SCSemicon

Overview: July 2014 HXB15H1G800CF HXB15H1G160CF 1-Gbit Double-Date-Rate-Three SDRAM DDR3 SDRAM EU RoHS HF pliant Products Data Sheet Rev. 1 Revision History: Rev. 1, 2014-07 Initial version Data Sheet HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM We Listen to Your ments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: info@scsemicon. SCS_techdoc_A4, 2014-07 2 Data Sheet 1 Overview HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM This chapter gives an overview of the 1-Gbit Double-Data-Rate-Three SDRAM product family and describes its main characteristics. 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • The 1-Gbit Double-Data-Rate-Three SDRAM offers the following key features:.
  • 1.5 V ±0.075 V Power Supply.
  • Off-Chip-Driver impedance adjustment (OCD) and 1.5 V ±0.075 V (SSTL_15) compatible I/O.
  • DRAM organizations with 8/16 data in/outputs.
  • Double Data Rate architecture:.
  • two data transfers per clock cycle.
  • eight internal banks for concurrent operation.
  • Programmable CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported.

More Datasheets from SCSemicon

Part Number Description
HXB15H1G800CF 1-Gbit Double-Date-Rate-Three SDRAM

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