HXB15H1G800CF - 1-Gbit Double-Date-Rate-Three SDRAM

Product Overview

Datasheet Details

Part number	HXB15H1G800CF
Manufacturer	SCSemicon
File Size	821.38 KB
Description	1-Gbit Double-Date-Rate-Three SDRAM
Datasheet	HXB15H1G800CF Datasheet
Additional preview pages of the HXB15H1G800CF datasheet.

HXB15H1G800CF Product details

Description

The 1-Gbit DDR3 DRAM is a high-speed Double-Data-RateTwo CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as an octal bank DRAM.

The 1-Gbit device is organized as 8 Mbit ×16 I/O ×8 banks or 16 Mbit ×8 I/O ×8 banks.

Features

The 1-Gbit Double-Data-Rate-Three SDRAM offers the following key features:.
1.5 V ±0.075 V Power Supply.
Off-Chip-Driver impedance adjustment (OCD) and 1.5 V ±0.075 V (SSTL_15) compatible I/O.
DRAM organizations with 8/16 data in/outputs.
Double Data Rate architecture:.
two data transfers per clock cycle.
eight internal banks for concurrent operation.
Programmable CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported.

📁 Similar Datasheet

Other Datasheets by SCSemicon

HXB15H1G160CF - 1-Gbit Double-Date-Rate-Three SDRAM

Published: Feb 13, 2016 |