SW15N50 Datasheet | SEMIPOWER

SAMWIN N-channel TO-220F MOSFET Features - High ruggedness - RDS(ON) (Max 0.32Ω)@VGS=10V - Gate Charge (Typ 66 n C) - Improved dv/dt Capability - 100% Avalanche Tested TO-220F 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 15A RDS(ON) : 0.32ohm Order Codes Item 1 Sales Type SW F 15N50 Marking SW15N50 Package TO-220F Packaging...