SEMIPOWER SW15N50
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW15N50 |
|---|---|
| Datasheet | SW15N50 Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 0.32Ω)@VGS=10V
● Gate Charge (Typ 66 nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-220F 123 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 15A RDS(ON) : 0.32ohm 2 1 3 Order Codes Item 1 Sales Type SW F 15N50 Marking SW15N50 Package TO-220F Packaging TUBE Absolute maximum ratings Symbol Parameter VDSS Drain to Source Voltage ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Volt
