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SW15N50 - MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.32Ω)@VGS=10V.
  • Gate Charge (Typ 66 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F 123 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW15N50
Manufacturer SEMIPOWER
File Size 513.33 KB
Description MOSFET
Datasheet download datasheet SW15N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW15N50 N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.32Ω)@VGS=10V ■ Gate Charge (Typ 66 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 123 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 15A RDS(ON) : 0.