SEMIPOWER SW50N06T
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW50N06T |
|---|---|
| Datasheet | SW50N06T Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 16.8mΩ)@VGS=10V
● Gate Charge (Typ 41nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.8mΩ 2 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 1 3 Order Codes Item 1 2 Sales Type SW D 50N06 SW P 50N06 Marking SW50N06T SW50N06T Package TO-252 TO-220 Packaging REEL TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC
