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SW50N06T - MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 16.8mΩ)@VGS=10V.
  • Gate Charge (Typ 41nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.8mΩ 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW50N06T
Manufacturer SEMIPOWER
File Size 707.68 KB
Description MOSFET
Datasheet download datasheet SW50N06T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW50N06T N-channel D-PAK/TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.8mΩ 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.