SW6N60 Description
These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM...
SW6N60 Key Features
- High ruggedness
- RDS(ON) (Max 1.5Ω)@VGS=10V
- Gate Charge (Typical 29nC)
- Improved dv/dt Capability
- 100% Avalanche Tested