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SW6N65 - MOSFET

General Description

These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology.

Key Features

  • TO-220F TO-251 TO-252.
  • High ruggedness.
  • RDS(ON) (Max 1.5Ω)@VGS=10V.
  • Gate Charge (Typ 20nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW6N65
Manufacturer SEMIPOWER
File Size 515.76 KB
Description MOSFET
Datasheet download datasheet SW6N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW6N65 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers BVDSS : 600V ID : 6A RDS(ON) :1.