SW6N65 Datasheet | SEMIPOWER

SAMWIN N-channel MOSFET Features TO-220F TO-251 TO-252 - High ruggedness - RDS(ON) (Max 1.5Ω)@VGS=10V - Gate Charge (Typ 20nC) - Improved dv/dt Capability - 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor...