Click to expand full text
MMBD217SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications • Ultra high speed switching
1 2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak www.DataSheet4U.com Reverse Voltage
Symbol VRM VR IO IFM IFSM Pd TJ Ts
Value 80 80 100 300 4 200 150 - 55 to + 150
Unit V V mA mA A mW
O
Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.
MMBD217SEW Datasheet
