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MMBTSA1505
PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications.
The transistor is subdivided into three groups O, Y and GR, according to its DC current gain.
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Features Excellent hFE linearity: hFE=25(min) at VCE=-6V, IC=-400mA
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
MMBTSA1505 Datasheet
