Excellent hFE linearity: hFE=25(min) at VCE=-6V, IC=-400mA
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW
O
C C
O.
Full PDF Text Transcription for MMBTSA1505 (Reference)
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MMBTSA1505. For precise diagrams, and layout, please refer to the original PDF.
MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according t...
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he transistor is subdivided into three groups O, Y and GR, according to its DC current gain. www.DataSheet4U.com Features Excellent hFE linearity: hFE=25(min) at VCE=-6V, IC=-400mA SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD.
MMBTSA1505 Datasheet
