MMBTSC2412
MMBTSC2412 is NPN Transistor manufactured by SEMTECH.
NPN Silicon Epitaxial Planar Transistor for general purpose applications. The transistor is subdivided into three groups Q, R and S. according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 7 150 200 150 -55 to +150
Unit V V V m A m W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1m A Q R S h FE h FE h FE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) f T COB Min. 120 180 270 60 50 7 Typ. 180 2
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Max. 270 390 560 0.1 0.1 0.4 3.5
Unit V V V µA µA V MHz p F
Collector Base Breakdown Voltage at IC=50µA Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=7V Collector Saturation Voltage at IC=50m A, IB=5m A Gain Bandwidth Product at VCE=12V, -IE=2m A, f=100MHz Output Capacitance at VCE=12V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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Fig. 1 Grounded emitter propagation characteristics
50 100 VCE=6V
Fig.2 Grounded emitter output characteristics(I)
Ta=25 o C 0.50m A 0.45m A 0.40m A 10
Fig.3 Grounded emitter output characteristics(II)
Ta=25 o C 30 A 27 A 24 A 21 A 6 18 A 15 A 4 2 0 0 4 8 12 16 20 12 A 9 A 6 A 3 A I B =0A
Collector current Ic (m A)
Collector current Ic (m...
