MMBTSC2412 Datasheet | PJ

Features - For Switching and AF Amplifier Applications. Equivalent Circuit 3.Collector 1.Base 2. Emitter MMBTSC2412 NPN Transistor SOT-23 1.Base 2.Emitter 3.Collector Marking Code : MMBTSC2412Q:1Q MMBTSC2412R:1B MMBTSC2412S:1C Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Maximum Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD TJ TSTG Value 60 50 7 150 200 150 -55 to +150 Unit V V V m A m W ℃ ℃ .pingjingsemi. 1/6 Revision：2.0 Oct-2021 Electrical Characteristics (TA=25℃) Parameter DC Current Gain at VCE = 6 V, IC = 1 m A Gain Group Collector Base Cutoff Current at VCB = 60V Emitter Base Cutoff Current at VEB = 7 V Collector Base Breakdown Voltage at IC = 50 μA Collector Emitter Breakdown Voltage at IC = 1 m A Emitter Base Breakdown Voltage at IE = 50 μA Collector Emitter Saturation Voltage at IC = 50 m A, IB = 5 m A Base Emitter Saturation Voltage at IC = 50 m A, IB = 5 m A Transition Frequency at VCE = 12 V, IE = 2 m A, f = 100 MHz Output Capacitance at VCB = 12 V, f = 1 MHz Symbol ICBO IEBO...