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RB501V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 2 Applications Low current rectification 1 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junc

Key Features

  • Small surface mounting type.
  • High reliability.

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Datasheet Details

Part number RB501V-40
Manufacturer SEMTECH
File Size 238.72 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB501V-40 Datasheet

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RB501V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 Applications • Low current rectification 1 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature www.DataSheet.co.kr Symbol VRM VR IO IFSM Tj Ts Value 45 40 0.1 1 125 - 40 to + 125 Unit V V A A O C C Storage Temperature Range O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Symbol VF VF IR CT Typ. 6 Max. 0.55 0.