ST2N6520 Datasheet | SEMTECH

ST 2N6520 .. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 350 350 5 500 250 625 150 -55 to +150 Unit V V V m A m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2N6520 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=10V, -IC=1m A at -VCE=10V, -IC=10m A at -VCE=10V, -IC=30m A at -VCE=10V, -IC=50m A at -VCE=10V, -IC=100m A Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=1m A Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=250V Emitter Cutoff Current at -VEB=4V Collector Base Capacitance at -VCB=20V, f=1MHz Emitter Base Capacitance at - VEB=0.5V, f=1MHz Base Emitter Saturation Voltage at -IC=10m A, -IB=1m A at -IC=20m A, -IB=2m A at -IC=30m A, -IB=3m A Collector Emitter Saturation Voltage at -IC=10m A, -IB=1m A at -IC=20m A, -IB=2m A at -IC=30m A, -IB=3m A at -IC=50m A, -IB=5m A Base Emitter On Voltage at -VCE=10V, -IC=100m A Current Gain Bandwidth Product at -VCE=20V, -IC=10m A, f=20MHz Turn On Time at -VBE(off)=2V, -VCC=100V -IC=50m A, -IB1=10m A Turn Off Time at -VCC=100V, -IC=50m A, -IB1=-IB2=10m A h FE h FE h FE h FE h FE -BVCBO -BVCEO -BVEBO -ICBO -IEBO Ccb Ceb -VBE(sat) -VBE(sat) -VBE(sat) -VCE(sat) -VCE(sat) -VCE(sat) -VCE(sat) -VBE(on) f T Min. 20 30 30 20 15 350 350 5 40 Typ. .. Max. 200 200 50 50 6 100 0.75 0.85 0.9 0.3 0.35 0.5 1 2 200 Unit V V V n A n A p F p F V V V V V V V V MHz ton toff - - 200 3.5 ns ns SEMTECH ELECTRONICS LTD. (Subsidiary of...