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1SS355 - SILICON EPITAXIAL PLANAR SWITCHING DIODES

General Description

Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range Symbol VRM

Key Features

  • Small plastic package suitable for surface mounted design.
  • High reliability with high surge current handling capability.

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Datasheet Details

Part number 1SS355
Manufacturer SEMTECH
File Size 365.81 KB
Description SILICON EPITAXIAL PLANAR SWITCHING DIODES
Datasheet download datasheet 1SS355 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS355 SILICON EPITAXIAL PLANAR SWITCHING DIODES FEATURES • Small plastic package suitable for surface mounted design • High reliability with high surge current handling capability APPLICATIONS • High speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Isurge Tj Tstg Value 90 80 100 225 500 125 - 55 to + 125 Unit V V mA mA mA OC OC Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.