1SS355
1SS355 is SILICON EPITAXIAL PLANAR SWITCHING DIODES manufactured by SEMTECH.
Features
- Small plastic package suitable for surface mounted design
- High reliability with high surge current handling capability
APPLICATIONS
- High speed switching
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
W2
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range
Symbol
VRM VR IO IFM Isurge Tj Tstg
Value 90 80 100 225 500 125
- 55 to + 125
Unit V V m A m A m A OC OC
Electrical Characteristics (Ta = 25 OC) Parameter
Forward Voltage at IF = 100 m A
Reverse Current at VR = 80 V
Capacitance between Terminals at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time at VR = 6 V, IF = 10 m A, RL = 100 Ω
Symbol VF IR CT trr
Max. 1.2 0.1 3 4
Unit V µA p F ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International...