• Part: 1SS355
  • Description: SILICON EPITAXIAL PLANAR SWITCHING DIODES
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 365.81 KB
Download 1SS355 Datasheet PDF
SEMTECH
1SS355
1SS355 is SILICON EPITAXIAL PLANAR SWITCHING DIODES manufactured by SEMTECH.
Features - Small plastic package suitable for surface mounted design - High reliability with high surge current handling capability APPLICATIONS - High speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Isurge Tj Tstg Value 90 80 100 225 500 125 - 55 to + 125 Unit V V m A m A m A OC OC Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 100 m A Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 m A, RL = 100 Ω Symbol VF IR CT trr Max. 1.2 0.1 3 4 Unit V µA p F ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International...