Datasheet Details
| Part number | 1SS368 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 408.59 KB |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Datasheet | 1SS368-SEMTECH.pdf |
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Overview: 1SS368 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching.
| Part number | 1SS368 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 408.59 KB |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Datasheet | 1SS368-SEMTECH.pdf |
|
|
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Cathode Anode 12 W8 Top View Marking Code: "W8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25?
) Parameter Symbol Value Maximum (peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Maximum (peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) Power Dissipation IFSM Ptot 1 1501) Junction Temperature TJ 125 Storage Temperature Range Ts -55 to +125 1) Mounted on a glass epoxy circuit board of 20x20mm, pad dimension of 4x4mm.
Unit V V mA mA A mW ?
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS368 | Diode | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |