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1SS368 - SILICON EPITAXIAL PLANAR DIODE

General Description

Absolute Maximum Ratings (T j = 25?

Key Features

  • Small package.
  • Low forward voltage: VF=0.98V (typ. ).
  • Fast reverse recovery time: trr=1.6ns (typ. ).
  • Small total capacitance: CT=0.5pF (typ. ).

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Datasheet Details

Part number 1SS368
Manufacturer SEMTECH
File Size 408.59 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet 1SS368 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS368 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application Features • Small package • Low forward voltage: VF=0.98V (typ.) • Fast reverse recovery time: trr=1.6ns (typ.) • Small total capacitance: CT=0.5pF (typ.) PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W8 Top View Marking Code: "W8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25? ) Parameter Symbol Value Maximum (peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Maximum (peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) Power Dissipation IFSM Ptot 1 1501) Junction Temperature TJ 125 Storage Temperature Range Ts -55 to +125 1) Mounted on a glass epoxy circuit board of 20x20mm, pad dimension of 4x4mm.