1SS368
1SS368 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
Reverse voltage
VR 80
Maximum (peak) forward current
Average forward current
IO 100
Surge current (10ms)
IFSM
Power dissipation
P 150
- Junction temperature
Tj 125
Storage temperature range
Tstg
- 55∼125
- : Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Unit
V V mA mA...
