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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS368
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
1SS368
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
85
Reverse voltage
VR 80
Maximum (peak) forward current
IFM
200
Average forward current
IO 100
Surge current (10ms)
IFSM
1
Power dissipation
P 150 *
Junction temperature
Tj 125
Storage temperature range
Tstg −55∼125
* : Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Unit
V V mA mA A
JEDEC mW EIAJ °C TOSHIBA °C Weight: 1.
1SS368 Datasheet
