| Part number | 1SS373 |
|---|---|
| Datasheet | 1SS373-SEMTECH.pdf |
| File Size | 469.91 KB |
| Manufacturer | SEMTECH |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
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Cathode Anode 12 SY Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: Characteristics at T j = 25.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS373 | Diode | Toshiba Semiconductor |
 |
1SS373 | High Speed Switching Diode | KEXIN |
| Part Number | Description |
|---|---|
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |
