1SS373
1SS373 is SILICON EPITAXIAL S CHOTTKY BARRIER DIODE manufactured by SEMTECH.
Features
- Low forward voltage: VF = 0.23V (typ.) @IF = 5m A
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
Absolute Maximum Ratings (T j = 25? )
Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range
Top View
Marking Code: "SY"
Simplified outline SOD-323 and symbol
Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr
Value 15 10 200 100 1 150 125
-55 to +125 -40 to +100
Unit V V m A m A A m W ? ? ?
Characteristics at T j = 25 ?
Parameter Forward Voltage
Reverse Current Total Capacitance
Test Conditions IF = 1m A IF = 5m A IF = 100m A VR = 10V f = 1MHZ
Symbol VF VF VF IR CT
Min
- Typ 0.18 0.23 0.35
Max
- 0.30 0.50 20 40
Unit V V V µA p F
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: .rct.ru
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SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, apany listed on the Hong Kong Stock Exchange, Stock Code:...
