1SS373
1SS373 is Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5m A
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
VR 10
Maximum (peak) forward current IFM 200
Average forward current
IO 100
Surge current (10ms)
IFSM
Power dissipation
- 150
Junction temperature
Tj 125
Storage temperature range
Tstg
- 55∼125
Operating temperature range
Topr
- 40∼100
- Mounted on a glass epoxy circuit board of 20 × 20 mm Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
V m A m...
