The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS373
High Speed Switching Application
Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
1SS373
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
Reverse voltage
VR 10
Maximum (peak) forward current IFM 200
Average forward current
IO 100
Surge current (10ms)
IFSM
1
Power dissipation
P * 150
Junction temperature
Tj 125
Storage temperature range
Tstg −55∼125
Operating temperature range
Topr −40∼100
* Mounted on a glass epoxy circuit board of 20 × 20 mm Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
V
V
mA
mA
A
mW
°C
°C
°C JEDEC
―
EIAJ TOSHIBA
― 1-1F1A
Weight: 1.
1SS373 Datasheet
