1SS373 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: (Ta = 25°C) V V mA mA A mW °C °C °C JEDEC ― EIAJ TOSHIBA ― 1-1F1A Weight: 1.9mg Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1mA ― IF = 5mA ― IF = 100mA ― VR = 10V ― VR = 0, f = 1MHz Min Typ.