1SS373 datasheet by Toshiba.
| Part number | 1SS373 |
|---|---|
| Datasheet | 1SS373_ToshibaSemiconductor.pdf |
| File Size | 142.09 KB |
| Manufacturer | Toshiba |
| Description | Diode |
|
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: (Ta = 25°C) V V mA mA A mW °C °C °C JEDEC ― EIAJ TOSHIBA ― 1-1F1A Weight: 1.9mg Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1mA ― IF = 5mA ― IF = 100mA ― VR = 10V ― VR = 0, f = 1MHz Min Typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE | SEMTECH |
 |
1SS373 | High Speed Switching Diode | KEXIN |
| Part Number | Description |
|---|---|
| 1SS370 | Silicon Epitaxial Planar Type Diode |
| 1SS372 | Silicon Epitaxial Schottky Barrie Diode |
| 1SS374 | Silicon Epitaxial Schottky Barrie Diode |
| 1SS377 | Silicon Epitaxial Schottky Barrie Diode |
| 1SS378 | Silicon Epitaxial Schottky Barrie Diode |
| 1SS379 | Silicon Epitaxial Schottky Barrie Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
| 1SS306 | Silicon Epitaxial Planar Type Diode |
