Semtech Corporation 2SA1271
PNP Silicon Epitaxial Planar Transistor
| Part No. | 2SA1271 |
|---|---|
| Datasheet | 2SA1271 Download |
| Manufacturer |  Semtech Corporation |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit -VCBO 35 V -VCEO 30 V -VEBO 5 V - IC 800 mA IE 800 mA Ptot 600 mW Tj 150 OC TS -55 to +150 OC G S P FORM A IS AVAILABLE РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SA1271 Characteristics at Tamb=25 oC Symbol Min. Typ. DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O hFE 100 - Y hFE 160 - at -VCE=1V, -IC=700mA hFE 35 - Collector Cutoff Current at -VCB=35V Emitter Cutoff Current -ICBO - - at -VEB=5V Collector Emitter Saturation Voltage -IEBO - - at -IC=500mA, -IB=20mA Transition Frequency -VCE(sat) - - at -VCE=5V, -IC=10mA Base Emitter Voltage fT - 120 at -IC=10mA, -VCE=1V Collector Output Capacitance -VBE 0.5 - at -VCB=10V, f=1MHz Collector Emitter Breakdown Voltage COB - 19 at -IC=10mA -VCEO 30 - G S P FORM A IS AVAILABLE Max.