Semtech Corporation 2SC5344
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 5 800 625 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC5344 Characteristics at Tamb=25 OC DC Current Gain at VCE=1V, IC=100mA Collector-Base Breakdown Voltage at IC=100µA, Collector-Emitter Breakdown Voltage at IC=10mA, Emitter-Base Breakdown Voltage at IE=10µA, Collector Cut-off Current at VCB=