Semtech Corporation BAS31
Silicon Epitaxial Planar Switching Diodes
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Maximum Average Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current HPower Dissipation Junction Temperature CStorage Temperature Range t = 1 µs t=1s Symbol VRRM IF(AV) IFRM IFSM Ptot Tj Tstg Value 120 200 600 2 1 350 150 - 55 to + 150 Unit V mA mA A mW OC OC ECharacteristics at Ta = 25 OC TParameter Forward Voltage at IF = 10 mA at IF = 50 mA Mat IF= 100 mA at IF = 200 mA at IF = 400 mA EReverse Current at VR = 90 V Sat VR = 90 V, TJ = 150 OC Symbol VF VF VF VF VF IR IR Min. - - Max. 750 840 900 1 1.25 100 100 Unit mV mV mV V V nA µA Reverse Breakdown Voltage at IR = 1 mA V(BR)R 120 - V Total Capacitance at VR = 0 V, f = 1 MHz CT - 35 pF Reverse Recovery T