• Part: BAS31
  • Description: General purpose controlled avalanche double diodes
  • Manufacturer: NXP Semiconductors
  • Size: 74.19 KB
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NXP Semiconductors
BAS31
BAS31 is General purpose controlled avalanche double diodes manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors General purpose controlled avalanche (double) diodes Product data sheet BAS29; BAS31; BAS35 Features - Small plastic SMD package - Switching speed: max. 50 ns - General application - Continuous reverse voltage: max. 90 V - Repetitive peak reverse voltage: max. 110 V - Repetitive peak forward current: max. 600 mA - Repetitive peak reverse current: max. 600 mA. PINNING DESCRIPTION BAS29 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3...