Semtech Corporation BC338
NPN Silicon Epitaxial Planar Transistor
| Part No. | BC338 |
|---|---|
| Datasheet | BC338 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM Ptot Tj TS 1. Collector 2. Base 3. Emitter TO-92 Plastic Package BC337 BC338 50 30 45 25 5 800 1 625 150 - 55 to + 150 Unit V V V mA A mW OC OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group -16 hFE 100 - 250 - -25 hFE 160 - 400 - -40 hFE 250 - 630 - at VCE = 1 V, IC = 300 mA -16 hFE 60 - - - -25 hFE 100 - - - -40 hFE 170 - - - Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at VCE = 1 V, IC = 300 mA Gain Bandwidth...