Siemens BC338
NPN Silicon AF Transistors
| Part No. | BC338 |
|---|---|
| Datasheet | BC338 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 337 BC 338 45 25 50 30 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 337 BC 338ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 10 mA BC 337 45 – – BC 338 25 – – Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 4...
