Semtech Corporation BC808
PNP Silicon Epitaxial Planar Transistors
| Part No. | BC808 |
|---|---|
| Datasheet | BC808 Download |
| Manufacturer |  Semtech Corporation |
| Description | PNP Silicon Epitaxial Planar Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range BC807 BC808 BC807 BC808 Symbol -VCBO -VCEO -VEBO -IC Ptot RθJA TJ TS Value 50 30 45 25 5 500 200 500 150 - 55 to + 150 Unit V V V mA mW K/W OC OCELECTRICAL CHARACTERISTICS
at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group -16 hFE 100 - 250 - -25 hFE 160 - 400 - -40 hFE 250 - 600 - at -VCE = 1 V, -IC = 500 mA hFE 40 - - - Collector Base Cutoff Current at -VCB = 20 V Emitter-Base Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base-Emitter Voltage at -IC = 500 mA, -VCE = 1 V Gain -Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 50 MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz -ICBO -IEBO -VCEsat -VBE(on) fT CCBO 80 - - 100 nA - 100 n...