Semtech Corporation BD911
NPN Complementary Silicon Power Transistors
| Part No. | BD911 |
|---|---|
| Datasheet | BD911 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Complementary Silicon Power Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Currentt Total Power Dissipation @ TC ≤ 25 OC Operating Junction Temperature Range Storage Junction Temperature Range Thermal Resistance, Junction to Case Symbol VCBO VCEO VEBO IC IB Ptot TJ TJ, Ts RθJC Value BD909 BD911 80 100 80 100 5 15 5 90 150 -65 to +150 1.4 Unit V V V A A W OC OC OC/W SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 BD909 / BD911 Characteristics at TC = 25 OC Parameter DC Current Gain at VCE = 4 V, IC = 0.5 A at VCE = 4 V, IC = 5 A at VCE = 4 V, IC = 10 A Collector Emitter Sustaining Voltage at IC = 100 mA Collector Cutoff Current at VCB = 80 V at VCB = 100 V Collector Cutoff Current at VCE = 40 V at VCE = 50 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 5 A, IB = 0.5 A at IC = 1
