BD911 Datasheet | SEMTECH

BD909 / BD911 NPN plementary Silicon Power Transistors TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Currentt Total Power Dissipation @ TC ≤ 25 OC Operating Junction Temperature Range Storage Junction Temperature Range Thermal Resistance, Junction to Case Symbol VCBO VCEO VEBO IC IB Ptot TJ TJ, Ts RθJC Value BD909 80 100 80 100 -65 to +150 Unit V V V A A W OC OC OC/W SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 BD909 / BD911 Characteristics at TC = 25 OC Parameter DC Current Gain at VCE = 4 V, IC = 0.5 A at VCE = 4 V, IC = 5 A at VCE = 4 V, IC = 10 A Collector Emitter Sustaining Voltage at IC = 100 m A Collector Cutoff Current at VCB = 80 V at VCB = 100 V Collector Cutoff Current at VCE = 40 V at VCE = 50 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 5 A, IB = 0.5 A at IC =...