LL4448
Silicon Epitaxial Planar Switching Diode
Fast switching diode in Mini MELF case especially suited for automatic surface mounting. Identical electrically to standard 1N4448.
LL-34
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature.
Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg
Value 100 75 150 500 500 1) 175
- 65 to + 175
Unit V V m A m A m W OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 5 m A at IF = 100 m A
Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage at IR = 100 µA
Capacitance at VR = 0, f = 1 MHz
Reverse Recovery Time at IF = 10 m A to IR = 1 m A, VR = 6 V, RL = 100 Ω
Symbol
IR IR IR V(BR)R
Ctot trr
Min.
- 100
- -
Max.
0.72 1
25 5 50
- 4
Unit
V n A µA µA V p...
