Semtech Corporation LL4448
Silicon Epitaxial Planar Switching Diode
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature. Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg Value 100 75 150 500 500 1) 175 - 65 to + 175 Unit V V mA mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Symbol VF IR IR IR V(BR)R Ctot trr Min. 0.62 - 100 - - Max. 0.72 1 25 5 50 - 4 4 Unit V nA µA µA V pF