MMBT4403
MMBT4403 is PNP Silicon General Purpose Transistor manufactured by SEMTECH.
PNP Silicon General Purpose Transistor As plementary types the NPN transistor MMBT4401 is remended.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation FR-5 Board 1) Derate above 25 OC Thermal Resistance Junction to Ambient Junction and Storage Temperature Range
1) FR-5 = 1 × 0.75 × 0.062 in.
SOT-23 Plastic Package SOT-23 Plastic Package
SOT-23 Plastic Package
Symbol -VCBO -VCEO -VEBO
-IC
Ptot
RθJA TJ, Ts
Value 40 40 5 600 200 1.8 417
-55 to +150
Unit V V V m A m W m W/OC OC/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 1 V, -IC = 0.1 m A at -VCE = 1 V, -IC = 1 m A at -VCE = 1 V, -IC = 10 m A at -VCE = 2 V, -IC = 150 m A at -VCE = 2 V, -IC = 500 m A
Collector Emitter Saturation Voltage at -IC = 150 m A, -IB = 15 m A at -IC = 500 m A, -IB = 50 m A
Base Emitter Saturation Voltage at -IC = 150 m A, -IB = 15 m A at -IC = 500 m A, -IB = 50 m A Collector Cutoff Current at -VCB = 35 V
Base Cutoff Current at -VEB = 5 V
Collector Base Breakdown Voltage at -IC = 0.1 m A
Collector Emitter Breakdown Voltage at -IC = 1 m A
Emitter Base Breakdown Voltage at -IE = 0.1 m A
Current Gain Bandwidth Product at -VCE = 10 V, -IC = 20 m A, f = 100 MHz
Collector Base Capacitance at -VCB = 10 V, -IE = 0, f = 1 MHz
Emitter Base Capacitance at -VEB = 0.5 V, -IC = 0, f = 1 MHz
Input Impedance at -IC = 1 m A, -VCE = 10 V, f = 1...
