Datasheet4U Logo Datasheet4U.com

RB500V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 12 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperatu

Key Features

  • Small surface mounting type.
  • Low IR.
  • High reliability.

📥 Download Datasheet

Datasheet Details

Part number RB500V-40
Manufacturer SEMTECH
File Size 172.62 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB500V-40 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability Applications • Low current rectification PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM Ptot VR IO IFSM Tj Ts Value 45 200 40 0.