Semtech Corporation RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB501V-40 |
|---|---|
| Datasheet | RB501V-40 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Small surface mounting type● High reliability PINNING PIN 1 2
DESCRIPTION
Cathode Anode 2APPLICATIONS
● Low current rectification 1 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Symbol VRM VR IO IFSM Tj Ts Value 45 40 0.1 1 125 - 40 to + 125 Unit V V A A O C C Storage Temperature Range O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Symbol VF VF IR CT Typ. 6 Max. 0.55 0.34 30 Unit V V µA pF Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 Datasheet pdf - RB501V-40 SEMTECH ELECTRONICS LTD. (Sub...
