Semtech Corporation RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB521G-30 |
|---|---|
| Datasheet | RB521G-30 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
DESCRIPTION
Cathode Anode 2 E Top View Marking Code: "E" Simplified outline SOD-523 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 100 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.35 10 Unit V µA Note: Please pay attention to static electricity when handling. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 A C RB521G-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads ∠ ALL ROUND HE D A SOD-523 E bp UNIT A b p C D E HE V mm 0.70 0.60 0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75 1.7 1.5 0.1 ∠ 5O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Li...